On the temperature dependence of subthreshold currents in MOS electron inversion layers, revisited

I presented a paper, on a paper: On the temperature dependence of subthreshold currents in MOS electron inversion layers. Yannis Tsividis even came to my talk at ISCAS 2016 and he told me that he took the data that Ulmer and Card used!

CMOS processes have become much better, and self-aligned CMOS have really helped MOSFET behavior become amazingly well behaved. The MATLAB that was used to extract and analyze the data is available here: http://www.nectix.com/research/subvt-temperature.html